data sheet semiconductor http://www.yeashin.com 1 rev.03 20140325 SB1620FCT~sb16150fct 16 ampere schott k y barrier recti f iers voltage - 20 to 15 0 volts current - 16.0 amperes fe a t ures ?e plasti c p a ckage has und e rw riters l aboratory flammability classi fica tion 94v -o u t ili zing flame retarda n t e poxy molding compound ?e ex ceeds env ironmental standar d s o f m i l-s-19 500/2 2 8 ?e l o w pow er loss, high e ffi cien cy ?e l o w forw ard v o ltage, high cur r ent capability ?e high surge capa city ?e for u s e in low v o ltage , hi gh freque n c y inv e rters, free w heeling, an d polarity protection a pplica t ion s ?e high tempera t ure sol dering : 260 o c / 10 se cond s at te r m inals ?e pb free p r odu ct at av ailable : 99% sn abov e meet ro hs env ironment su bst a nce dire ctiv e reque st m e c h an i c al d a t a ?e c a s e : i to- 2 20ab molded pl a s t i c ?e termina l s: lead, solderab le p e r m i l- std-202, me thod 2 08 ?e polari ty : as m a r k ed ?e m o u n ting po si tio n : a n y ?e m a xim u m r a ti ng s a n d electric a l ch a r a c teristi c s r a tings a t 2 5 a m bient tempera t ure unle s s o t herw i se speci f ied. single p hase hal f wav e 60hz, r e si stiv e or indu ctiv e load. for cap a ci tiv e load, dera t e curr ent by 20%. sy m b ol sb 1620fct sb 1630fct sb 1640fct sb 1650fct sb 1660fct sb 1680fct sb 16100fct sb 16150fct uni t m a x i mum recurre n t peak rev e rse v o lt 2 0 3 0 4 0 5 0 6 0 8 0 1 5 0 v max i mum r m s vo lt 1 4 2 1 2 8 35 42 56 105 v m a xi mum dc bl o cki ng volt 2 0 3 0 4 0 5 0 6 0 8 0 1 5 0 v m a x i mum a verage for w a rd rect if ie d current at tc=90 1 6 . 0 a peak for w a rd surge current , 8 . 3m s single ha lf si ne w a v e supe r i mposed on r a ted load(jedec method) 1 5 0 a m a x i mum for w a rd voltage at 8.0 a per e l ement 0 . 5 5 0 . 7 5 0 . 8 5 v 0 . 5 m a xi mum dc rever s e cur r e nt at rated tc=25 dc blocking vo lta g e per ele m ent tc =100 100 ma t y pical therma l r esistance note 60 /w oper ati ng and sto r age tempe r atur e range tj,tstg -55 to +150 notes: thermal resi stan ce ju nction to ambi ent o c o c o c o c o c r a j 1 0 0 7 0 1 0 0 0.92 0 . 1 7 1 2 0 o c ito-220ab unit:inch(mm) .406(10.3) max. .137(3.5) .118(3.0) .055(1.4) .039(1.0) .035(0.9) .011(0.3) .1(2.55) .1(2.55) .59(15.00) .50(12.70) .161(4.1) max. .606(15.4) .583(14.8) .272(6.9) .248(6.3) .189(4.8) .165(4.2) .130(3.3) max. .032(0.8) max. .138(3.50) .100(2.55) .071(1.80) max.
http://www.yeashin.com 2 rev.03 20140325 SB1620FCT~sb16150fct device characteristics average forward current fig.1- forward current derating curve fig.2- typical instantaneous forward chracteristics fig.4- maximum non - repetitive surge current fig.3- typical reverse characteristic case temperature, c o 8.3ms single half since-w ave jedec method instantaneous reverse current ,,ma percent of instantaneous reverse voltage,(%) 10 1.0 0.1 0.01 0.001 t=25 c j o t=75 c j o t =100 c j o .3 .4 .5 .6 .7 .8 0.9 1.0 40 10 8 6 4 2 1.0 .8 .6 .4 .2 .1 t=25c pulse width = 300 s 1% duty cycle j o m 150v 20,30,40v 50,60v 80,100v
marking information http ?g // www . y ea shin.com ? yeashin technology co., ltd. sb 1 6 xxfct xxxx line 1: ys logo and date code the first half of line 1: ys logo the second half of line 1 : yy ww: year, yy ww : week. line 2 : device name and package type sb : schottky barrier rectifier : : the peak reverse voltage of product. line 3 : device structure symbol 1 xx : xx 6 16 16 ampere series product.
?Z packing ? dimension ? qty picture ?? bag/tube / ? 527mm*33mm*7mm 50 pcs inner box ? 555mm*140mm*55mm 2000 pcs carton 575mm*285mm *155mm 8000 pcs to/ito220 ? yeashin technology co., ltd. http ?g //www.yeashin.com
|
